FLASH MEMORY DEVICE AND PROGRAMMING METHOD THEREOF

摘要

PURPOSE: A flash memory device and a programming method thereof are provided to generate a uniform voltage drop at a source line without regard to the number of programmed memory cells. CONSTITUTION: A memory cell array comprises ni x 2 memory cells having a drain connected to each of ni bit lines and a gate connected to each of 2m word lines(WL1-WL2m) and a source connected to each of m source lines. A dummy array(30) comprises at least 2m transistors having a gate connected to each of 2m word lines and a source connected to each of m source lines and a drain connected to at least more than one dummy bit line. A current obtained by adding a bias current flowing from the source line to the bit lines and a bias current flowing from the source line to the dummy bit line in response to n input data during programming is equal to a bias current flowing from the source line to the bit lines when n memory cells of the memory cell array are programmed.