发明名称 |
Modified facet etch to prevent blown gate oxide and increase etch chamber life |
摘要 |
A modified facet is disclosed to prevent blown gate oxide and increase etch chamber life. The modified facet etch is a two-stage process. The first stage is a plasma sputter etch to form a facet profile. The first stage etch is terminated prior to reaching the target depth for the etching process. The second stage etch is a reactive ion etch which directionally follows the facet profile to reach the target depth.
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申请公布号 |
US6762125(B1) |
申请公布日期 |
2004.07.13 |
申请号 |
US20010854975 |
申请日期 |
2001.05.14 |
申请人 |
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发明人 |
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分类号 |
H01L21/311;(IPC1-7):H01L21/302;H01L21/306 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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