发明名称 |
Recycling donor wafer after having taken off useful layer of semiconductor materials, involves removing substance using mechanical mechanism so that part of taking-off structure will remain |
摘要 |
Recycling a donor wafer after having taken off a useful layer of semiconductor materials involves removing a substance on the side where the taking-off took place using mechanical mechanism so that a part of taking-off structure will remain without a supplementary step of reforming the useful layer. The remaining part includes other useful layer(s) that can be taken off after recycling. Recycling donor wafer after having taken off a useful layer of semiconductor materials involves removing a substance on the side where the taking-off took place. The donor wafer comprises a substrate (1) and a taking-off structure (I), which has the useful layer prior to the taking-off step. The substance removal step is performed using mechanical mechanism so that a part of the taking-off structure will remain without a supplementary step of reforming the useful layer. The remaining part includes other useful layer(s) that can be taken off after recycling. Independent claims are also included for the following: (a) taking-off a useful layer from a donor wafer comprising transferring the wafer to a receiving substrate (2), bonding the wafer to the receiving substrate on the side of the useful layer to be taken off, detaching the useful layer in the taking-off structure of the donor wafer, and recycling the wafer; and (b) a donor wafer comprising a substrate and a remaining part of the taking-off structure having provided the useful layer and has a thick other useful layer(s) to be taken-off.
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申请公布号 |
FR2849714(A1) |
申请公布日期 |
2004.07.09 |
申请号 |
FR20030000098 |
申请日期 |
2003.01.07 |
申请人 |
SOITEC SILICON ON INSULATOR |
发明人 |
GHYSELEN BRUNO;AULNETTE CECILE;OSTERNAUD BENEDITE;AKATSU TAKESHI;FAURE BRUCE |
分类号 |
H01L21/762;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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