| 摘要 |
Disclosed is a power semiconductor device, including a first semiconductor layer of a first conductivity type, a second semiconductor layer of the first conductivity type and a third semiconductor layer of a second conductivity type which are alternately and laterally arranged on the first semiconductor layer and, a fourth semiconductor layer of the second conductivity type selectively formed in the surface regions of the second and third semiconductor layers, a fifth semiconductor layer of the first conductivity type selectively formed in the surface region of the fourth semiconductor layer, and a control electrode formed on the surfaces of the second, fourth and fifth semiconductor layers, in which a layer thickness ratio A is given by the expression: ti 0<A=t/(t+d)<=0.72 where t is the thickness of the first semiconductor layer, and d is the thickness of the second semiconductor layer.
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