发明名称 METHOD OF PRODUCING SPUTTERING TARGET, AND SPUTTERING TARGET
摘要 <P>PROBLEM TO BE SOLVED: To provide a method of producing a sputtering target by which a resist layer capable of corresponding to the requirement for increasing the recording capacity of various devices can be formed with high precision in such a manner that the oxidizing degree of metal unsaturated oxide composing the resist layer can easily be stabilized, and to provide a sputtering target. <P>SOLUTION: At least one kind of metal powder and at least one kind of metal oxide powder are mixed, or a plurality of metal oxide powders different in valences are mixed, and the mixture is subjected to pressure sintering to obtain the sputtering target. <P>COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004190120(A) 申请公布日期 2004.07.08
申请号 JP20020362639 申请日期 2002.12.13
申请人 SONY CORP 发明人 KOCHIYAMA AKIRA;ARAYA KATSUHISA;NAGATA TAKANORI
分类号 C04B35/00;C04B35/495;C04B35/645;C23C14/34 主分类号 C04B35/00
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