| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming metal wiring of a semiconductor element capable of obtaining excellent interfacial characteristics and process characteristics of short process time. SOLUTION: This method comprises a step of adsorbing a halogen atom on the surface of a TiN thin film while forming the TiN thin film 17 on a semiconductor substrate 11 by using a Ti compound and an NH<SB>3</SB>reaction product containing a halogen element, and a step of forming a copper thin film 19a on the TiN thin film by using the adsorbed halogen atom as a catalyst. COPYRIGHT: (C)2004,JPO&NCIPI
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