| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma ashing method which can perform full ashing without leaving a resist film which is deteriorated due to the pretreatment such as etching and doping, and does not require a treatment time. SOLUTION: In the plasma ashing method, an O<SB>2</SB>gas-base plasma is produced inside a vacuum container and the resist on a treatment substrate mounted on an electrode is removed. The temperature of the electrode is set to 100°C or lower, and when the treatment is carried out in two treatment steps, it is carried out in such a manner that the resist removal speed in a second step is at least twice that in a first step. COPYRIGHT: (C)2004,JPO&NCIPI
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