摘要 |
PROBLEM TO BE SOLVED: To provide a plasma treatment method which processes a desired micro portion simply and accurately. SOLUTION: The plasma treatment method is comprised of irradiating an active particle generated by a micro plasma generated under a pressure of 10,000Pa and higher and of 3 atmospheric pressure and lower on a surface of a treated object of a metal or a semiconductor, and of processing the surface 17 of the treated object. The method is provided with a first step to remove a natural oxide film 17a existing on the surface of the treated object and a second step to etching-process a part or all of an area where the natural oxide film is removed. COPYRIGHT: (C)2004,JPO&NCIPI
|