发明名称 PLASMA TREATMENT METHOD
摘要 PROBLEM TO BE SOLVED: To provide a plasma treatment method which processes a desired micro portion simply and accurately. SOLUTION: The plasma treatment method is comprised of irradiating an active particle generated by a micro plasma generated under a pressure of 10,000Pa and higher and of 3 atmospheric pressure and lower on a surface of a treated object of a metal or a semiconductor, and of processing the surface 17 of the treated object. The method is provided with a first step to remove a natural oxide film 17a existing on the surface of the treated object and a second step to etching-process a part or all of an area where the natural oxide film is removed. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004193590(A) 申请公布日期 2004.07.08
申请号 JP20030393835 申请日期 2003.11.25
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 OKUMURA TOMOHIRO;SAITO MITSUHISA
分类号 C23F4/00;H01L21/3065;(IPC1-7):H01L21/306 主分类号 C23F4/00
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