发明名称 |
High power silicon carbide and silicon semiconductor device package |
摘要 |
A silicon carbide semiconductor field effect transistor and a silicon metal oxide semiconductor field effect transistor are packaged as a hybrid field effect transistor having a high voltage resistance provided by the silicon carbide device and a low switch-on resistance provided by the silicon device. The two devices are co-packaged electrode-on-electrode. A die-on-die configuration reduces the footprint of the hybrid device, and a side-by-side configuration provides an increased area for thermal management of the hybrid device. |
申请公布号 |
US2004130021(A1) |
申请公布日期 |
2004.07.08 |
申请号 |
US20030698260 |
申请日期 |
2003.10.31 |
申请人 |
INTERNATIONAL RECTIFIER CORPORATION |
发明人 |
SRIDEVAN SRIKANT |
分类号 |
H01L23/60;H01L25/18;(IPC1-7):H01L23/34 |
主分类号 |
H01L23/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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