发明名称 Dry etch process for copper
摘要 A method of focused ion beam milling of a copper on a sample, and a focused ion beam apparatus. The method comprises the steps of exposing an area of copper on the sample; and forming a given feature in the copper area by using the focused ion beam to draw a mill box in the copper area, scanning the focused ion beam across the mill box for an extended period of time to remove a portion of the copper in the copper area and thereby to form the given feature, and introducing tetramethylcyclotetrasiloxane (TMCTS) in said area during the scanning step. After the copper feature is formed, a very light dose of XeF2 may be introduced to clean up any residue that may have formed.
申请公布号 US2004132287(A1) 申请公布日期 2004.07.08
申请号 US20030338095 申请日期 2003.01.07
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 FISCHER LAWRENCE S.;HERSCHBEIN STEVEN BRETT;RUE CHAD;SCRUDATO CARMELO F.;SIEVERS MICHAEL RAY
分类号 C23F4/00;H01J37/305;H01L21/3213;H01L21/768;(IPC1-7):H01L21/44;C23C14/00 主分类号 C23F4/00
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