SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A semiconductor device is provided to be actively used in fabricating a semiconductor device like a recent McRAM by easily forming a source/drain electrode of an LDD(lightly doped drain) structure in the McRAM. CONSTITUTION: A substrate(1) is prepared in which an active region(2) and an inactive region(3) are defined. A flash gate electrode(10) made of a dielectric layer pattern, the first conductive layer pattern and an insulation layer pattern is formed on the active region of the substrate. The first spacer(11) is formed on the sidewall of the flash gate electrode. A gate electrode(20) including a gate oxide layer pattern and the second conductive layer pattern is formed on the substrate. The first ion implantation process using the first spacer as an ion implantation mask is performed to form a source/drain electrode(30) of a shallow junction in the substrate adjacent to the first spacer and the gate electrode. The second spacer(12) is formed on the sidewalls of the first spacer and the gate electrode. The second ion implantation process using the second spacer as an ion implantation mask is performed to form a source/drain electrode(31) of a deep junction in the substrate adjacent to the flash gate electrode, so that a source/drain electrode(40) of an LDD structure is formed.