| 摘要 |
PURPOSE: A trench isolation method is provided to improve gap-fill property of an HDP(High Density Plasma) oxide layer by rounding the top corner portion of a trench. CONSTITUTION: A pad oxide layer(12) and a pad nitride layer(14) are formed on a substrate(10). A trench is formed by etching the substrate. A nitride spacer(18) is formed at the inner wall of the trench. At this time, the pad nitride layer is partially etched. Then, an HDP oxide layer(20) is filled in the trench and polished to expose the pad nitride layer.
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