| 摘要 |
PURPOSE: A TFT is provided to prevent an etchant from flowing into a step difference portion of a semiconductor layer and gate lines while forming the gate lines in dummy patterns, thereby efficiently preventing disconnection of the gate lines. CONSTITUTION: A semiconductor layer(23) is formed in a predetermined area of a substrate(21). A gate insulating film(24) is formed on a front side of the substrate(21) including the semiconductor layer(23). Gate lines are formed in predetermined areas of the gate insulating film(24). Dummy patterns are spaced from a part overlapped with the gate lines, and are protruded from the semiconductor layer(23) along longitudinal direction of the gate lines. The semiconductor layer(23) defines an impurities area, and forms a source electrode and a drain electrode in connection with the impurities area.
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