METHOD FOR FABRICATING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a capacitor of a semiconductor device is provided to lower the boosting frequency and the power consumption by increasing a capacitance value per unit area. CONSTITUTION: A bottom electrode(120) of a capacitor is formed on an upper surface of a semiconductor substrate(110). The first dielectric layer(132) is formed by depositing an aluminum oxide on an upper surface of the bottom electrode of the capacitor. The second dielectric layer(134) is formed on an upper surface of the first dielectric layer. The third dielectric layer(136) is formed on an upper surface of the second dielectric layer. A top electrode(140) of the capacitor is formed on an upper surface of the third dielectric layer.