| 摘要 |
PURPOSE: A method for forming a transistor of a semiconductor device is provided to be capable of preventing a gate thinning phenomenon. CONSTITUTION: A pad oxide layer, a pad nitride layer, and a buffer insulating layer are sequentially deposited on a silicon substrate(10). Trenches are formed by selectively etching the resultant structure. An isolation layer(50) is formed in each trench. An LDD(Lightly Doped Drain) is formed in the substrate. An etch-back process is carried out for forming a nitride layer(80) for reducing the length of a gate. The substrate is selectively etched as much as the depth of the LDD. A local channel region(90) is formed on the etched substrate. A gate isolating layer and a gate are sequentially formed on the resultant structure. Then, a source(120a) and a drain(120b) are formed at both sides of the gate in the substrate. A silicide layer(130) and a barrier insulating layer(140) are sequentially formed on the source/drain/gate. An insulating layer(150) for planarization is deposited on the resultant structure. A gate plug(160a), a source plug(160b) and a drain plug(160c) are formed through the insulating layer for contacting the gate/source/drain, respectively.
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