| 摘要 |
PURPOSE: A method for forming a capacitor of a semiconductor device is provided to be capable of obtaining a metal oxide lower electrode while minimizing oxidation of a diffusion barrier layer. CONSTITUTION: A diffusion barrier layer is formed on a semiconductor substrate. An amorphous metal oxide thin film as a lower electrode is deposited on the diffusion barrier layer and crystallized by annealing using mixed gases of oxygen and inert gas. A dielectric film is then formed on the crystallized metal oxide lower electrode. Then, an upper electrode is formed on the dielectric film.
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