| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to improve etch margin of a hard mask by controlling etch profile of an oxide layer in damascene processing. CONSTITUTION: A gate oxide layer(3) and a polysilicon layer(4) are sequentially formed on a substrate(1). A thick oxide layer is formed on the polysilicon layer. By selectively etching the oxide layer, an opening part is formed to define a gate region. A metal film(8) is partially formed in the opening part. A diffusion barrier layer and a hard mask(9) are formed on the metal film to fill the opening part. A gate stacked structure is formed by etching the polysilicon layer using the hard mask as a mask.
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