发明名称 TEST METHOD OF SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE: A test method of a semiconductor memory device is provided to increase channel efficiency of a test equipment using an optimum data input/output pin compression test method. CONSTITUTION: According to the test method of a semiconductor memory device, a test is performed as to a memory cell using a data input/output pin compression test method established with a constant compression ratio(S1). Cells judged as fail in the previous step are replaced with redundancy cells(S2). And the test as to the memory cell is performed using a data input/output pin compression test method established with an optimum compression ratio(S3).
申请公布号 KR20040060165(A) 申请公布日期 2004.07.06
申请号 KR20020086700 申请日期 2002.12.30
申请人 HYNIX SEMICONDUCTOR INC. 发明人 PARK, SANG UK
分类号 G11C29/00;(IPC1-7):G11C29/00 主分类号 G11C29/00
代理机构 代理人
主权项
地址
您可能感兴趣的专利