| 摘要 |
PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to improve the reliability of the capacitor by forming a capacitor hole with a stable structure. CONSTITUTION: An insulating layer(24) for forming the first capacitor is formed on a substrate(20). The first capacitor hole is formed by selectively etching the insulating layer. The first lower electrode(26) is formed in the first capacitor hole. The first dielectric film(27) is formed on the first lower electrode. The first upper electrode(28) is formed on the first dielectric film to entirely fill the first capacitor hole. An insulating layer(29) for forming the second capacitor is formed on the resultant structure. The second capacitor hole is formed to expose the first capacitor by selectively etching the insulating layer. The second lower electrode(31) is formed at the sidewalls of the second capacitor hole. The second dielectric film(32) is formed to connect the first dielectric film. The second upper electrode(33) is formed on the second dielectric film to entirely fill the second capacitor hole.
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