| 摘要 |
PURPOSE: A method for forming a triple gate oxide layer of a semiconductor device is provided to prevent the damage of a logic region by forming gate oxide layers with different thickness on the logic region, an I/O region and a high-voltage device region. CONSTITUTION: A nitride pattern is formed on a substrate(11) to expose a high-voltage device region. The first gate oxide layer(21) with the first thickness is formed on the exposed high-voltage device region. The nitride pattern on a logic and I/O region is selectively removed. Wells(22,23) are formed in the logic region and the I/O region, respectively. The second oxide layer(24) with the second thickness is formed on the I/O region. The third gate oxide layer(26) with the third thickness is formed on the logic region.
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