METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to improve reliability of a gate oxide layer and to prevent reverse narrow width effect by preventing local thinning of the gate oxide layer. CONSTITUTION: A semiconductor substrate(10) defined with an active region by an isolation layer(15A) is prepared. An amorphous silicon layer is formed on the active region by implanting silicon ions. A gate oxide layer(18A) with uniform thickness is then formed on the active region by oxidizing the amorphous silicon layer.