发明名称 APPARATUS AND METHOD FOR MONITORING MASK PATTERN
摘要 PURPOSE: An apparatus and method for monitoring a mask pattern are provided to prevent the reduction of semiconductor yield due to deformation of the mask pattern by monitoring deformation degree. CONSTITUTION: A mask pattern(105) is used for forming a pattern in an exposure. A monitoring mark(105a) is inserted in the mask pattern. An apparatus for monitoring the mask pattern includes a light source(102) for generating monitoring light, a reticle stage(104) loaded with the mask pattern, a measurement part(106) and a microcomputer(108). The measurement part is used for measuring a distance value of the mark by using a signal obtained from a mark scanning process. The microcomputer is used for stopping the exposure when the second distance value is different from the first distance value.
申请公布号 KR20040060190(A) 申请公布日期 2004.07.06
申请号 KR20020086729 申请日期 2002.12.30
申请人 ANAM SEMICONDUCTOR., LTD. 发明人 KIM, U YONG
分类号 H01L21/66;(IPC1-7):H01L21/66 主分类号 H01L21/66
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