发明名称 |
APPARATUS AND METHOD FOR MONITORING MASK PATTERN |
摘要 |
PURPOSE: An apparatus and method for monitoring a mask pattern are provided to prevent the reduction of semiconductor yield due to deformation of the mask pattern by monitoring deformation degree. CONSTITUTION: A mask pattern(105) is used for forming a pattern in an exposure. A monitoring mark(105a) is inserted in the mask pattern. An apparatus for monitoring the mask pattern includes a light source(102) for generating monitoring light, a reticle stage(104) loaded with the mask pattern, a measurement part(106) and a microcomputer(108). The measurement part is used for measuring a distance value of the mark by using a signal obtained from a mark scanning process. The microcomputer is used for stopping the exposure when the second distance value is different from the first distance value.
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申请公布号 |
KR20040060190(A) |
申请公布日期 |
2004.07.06 |
申请号 |
KR20020086729 |
申请日期 |
2002.12.30 |
申请人 |
ANAM SEMICONDUCTOR., LTD. |
发明人 |
KIM, U YONG |
分类号 |
H01L21/66;(IPC1-7):H01L21/66 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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