| 摘要 |
PURPOSE: A method for forming a semiconductor device is provided to prevent particles without opening an overlay mark region using a tungsten spacer. CONSTITUTION: A trench is formed by selectively etching a storage node oxide layer(11) of an overlay mark region. A conductive layer(13), a plate poly(15) and an interlayer dielectric(17) are sequentially formed on the trench. A barrier metal film(23) is formed on the interlayer dielectric. A tungsten spacer(21) is formed at inner walls of the trench. A metal line(25) is formed on the resultant structure to remain the metal line on the overlay mark region.
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