| 摘要 |
PURPOSE: A method for forming a ferroelectric random access memory is provided to prevent the damage of an upper electrode by covering an interlayer dielectric on a capacitor. CONSTITUTION: A capacitor is formed by sequentially stacking a lower electrode(53), a ferroelectric film(55) and an upper electrode(57) on a substrate(41) with a storage node contact plug(47). The first interlayer dielectric(59) is covered on the capacitor. The second interlayer dielectric(61) with a relatively high etching selectivity is formed on the resultant structure. A metallization contact hole(63) is formed to expose the upper electrode by patterning the second and first interlayer dielectric. A metal line(67) is formed to connect the upper electrode.
|
