发明名称 |
Molecular wire crossbar flash memory |
摘要 |
A nano-scale flash memory comprises: (a) source and drain regions in a plurality of approximately parallel first wires, the first wires comprising a semiconductor material, the source and drain regions separated by a channel region; (b) gate electrodes in a plurality of approximately parallel second wires, the second wires comprising either a semiconductor material or a metal, the second wires crossing the first wires at a non-zero angle over the channel regions, to form an array of nanoscale transistors; and (c) a hot electron trap region at each intersection of the first wires with the second wires. Additionally, crossed-wire transistors are provided that can either form a configurable transistor or a switch memory bit that is capable of being set by application of a voltage. The crossed-wire transistors can be formed in a crossbar array.
|
申请公布号 |
US6760245(B2) |
申请公布日期 |
2004.07.06 |
申请号 |
US20020138076 |
申请日期 |
2002.05.01 |
申请人 |
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. |
发明人 |
EATON, JR. JAMES R.;KUEKES PHILIP JOHN |
分类号 |
G11C11/00;G11C11/34;G11C13/02;G11C16/04;G11C17/00;H01L27/28;H01L51/00;H01L51/30;(IPC1-7):G11C17/00 |
主分类号 |
G11C11/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|