METHOD FOR MANUFACTURING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to improve capacitance of a ferroelectric capacitor by restraining the generation of an oxide layer between a lower electrode and a dielectric film. CONSTITUTION: A lower electrode(24) made of a conductive silicon layer is formed on a semiconductor substrate(20) with a contact plug(22). A silicon nitride layer is formed by nitrifying the surface of the lower electrode. An oxynitride layer(25') is formed on the lower electrode by injecting oxygen to the silicon nitride layer. Then, a dielectric film(26) and an upper electrode(27) are sequentially formed on the oxynitride layer.