| 摘要 |
PURPOSE: A method for forming an interlayer insulating layer of a semiconductor device is provided to improve gap-filling and planarizing property without using an additional planarization process. CONSTITUTION: A semiconductor substrate(10) with the topology due to a gap is prepared. The first insulating layer(16A) of SOD(Spin On insulating layer ) group is formed on the substrate. The second insulating layer(16B) with good densification and slow etch speed compared to the first insulating layer is formed on the first insulating layer. The first insulating layer is made of siloxanes, silicates or HSQ(HydrogenSilsesQuioxanes). The second insulating layer is formed by LP(Low Pressure)-CVD, SACVD(Sub Atmosphere CVD), PE(Plasma Enhanced)-CVD, or AP(Atmosphere Pressure)-CVD using SiH4 and TEOS as a reaction source.
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