| 摘要 |
PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to be capable of preventing effectively leaning between lower electrodes. CONSTITUTION: A nitride layer(13) and a capacitor oxide layer are sequentially formed on a semiconductor substrate(10) with a plug(12). A capacitor hole is formed to expose the plug by etching the capacitor oxide layer and the nitride layer. A cylindrical lower electrode(16) is formed by depositing an amorphous silicon layer on the hole and the capacitor oxide layer. The amorphous silicon layer is crystallized at the first temperature. The first PH3 doping is performed at the second temperature, wherein the second temperature is relatively low compared to the first temperature. Then, second PH3 doping is performed at the third temperature, wherein the third temperature is relatively low compared to the second temperature.
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