METHOD FOR FORMING OVERLAP MARK OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming an overlap mark of a semiconductor device is provided to improve reliability by forming the overlap mark of box-in-box shape using a photoresist pattern. CONSTITUTION: Word lines(33) and bit lines(37) are sequentially formed on a cell region of a substrate(31). At this time, a center portion with an overlap vernier is selectively etched to quadrangle structure. An interlayer dielectric(39) is formed on the resultant structure, wherein the center portion is provided with a concave part of quadrangle structure. A polysilicon layer(41) is formed on the resultant structure. A photoresist pattern(43) is formed on the concave part, thereby forming the overlap mark of box-in-box shape.