| 摘要 |
PURPOSE: A method of forming an interlayer dielectric of a semiconductor device is provided to restrain outdiffusion of fluorine atoms and to minimize a dielectric constant by forming Be-F bonding instead of Si-F bonding using Be gas as source gas. CONSTITUTION: An FSG(Fluorinated Silicate Glass) layer as an interlayer dielectric is deposited on a predetermined layer. At this time, Be gas as source gas is supplied to FSG layer. The Be gas is one selected from the group consisting of BeCl2, BeBr2 and Bel2 gas. A fluorine flow rate versus a Be flow rate is in the range of 1: 0.5 to 1. The flow rate of the Be gas is in the range of 10 to 1000 sccm. The FSG layer is formed by using a high density plasma CVD(Chemical Vapor Deposition) or a plasma enhanced CVD. The FSG layer is used as a passivation layer.
|
