FLASH MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A flash memory device and a manufacturing method thereof are provided to restrain electron transfer by dividing a tunnel nitride layer into nitride patterns and to adjust easily the interval between the nitride patterns by using a spacer as an etching mask. CONSTITUTION: A nitride layer, a sacrificial oxide layer(51) and a hard mask layer(53) are sequentially deposited on the first oxide layer(40). A photoresist pattern with a predetermined window is formed on the hard mask layer. A hard mask pattern is formed by performing RIE(Reactive Ion Etching) on the hard mask layer under CF4 gas atmosphere using the photoresist pattern as an etching mask. At this time, a spacer(57) is formed at sidewalls of the hard mask pattern. The nitride layer is divided into nitride patterns(50a,50b) by etching using the spacer and the hard mask pattern as an etching mask.