| 摘要 |
PURPOSE: A method for forming a storage node contact of a semiconductor device is provided to prevent dishing in CMP(Chemical Mechanical Polishing) by depositing a buffer oxide layer on a bit line. CONSTITUTION: A plurality of bit lines are formed by sequentially depositing a metal line(1), a mask nitride layer(2) and a buffer oxide layer(8), and then forming a spacer(3) at both sidewalls of the same. An oxide pattern(4) is formed on the resultant structure. Polysilicon(5) is deposited on the entire surface of the resultant structure. Then, storage node contacts are formed by performing CMP until the mask nitride layer is exposed.
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