METHOD FOR FORMING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a capacitor of a semiconductor device is provided to prevent collapse of a storage node pattern by using doped silicate glass layers with different dose. CONSTITUTION: A heavily doped first PSG layer(21) and a lightly doped second PSG layer(22) are sequentially formed on a substrate. An insulating layer(23) made of PE-TEOS(Plasma Enhanced Tetra Ethyl Ortho Silicate) is formed on the second PSG layer. A storage node forming region is defined by selectively etching the PE-TEOS layer, the second and first PSG layers. The defined storage node forming region is cleaned. A storage node pattern is formed by forming a polysilicon layer(24) on the storage node forming region.