| 摘要 |
PURPOSE: A method for forming an isolation layer of a semiconductor device is provided to prevent INWE(Inverse Narrow Width Effect) by forming a stacked structure including an oxynitridation layer, an oxide layer and a nitride layer on a trench. CONSTITUTION: A trench is formed by selectively etching a silicon substrate(11) using a pad pattern(12). An oxynitridation layer(15), an oxide layer(16) and a nitride layer(17) are sequentially formed on the trench. Then, an isolation layer is formed by filling an insulating layer in the trench and planarizing.
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