| 摘要 |
PURPOSE: A method for forming a copper interconnection is provided to prevent pollution of copper by forming a copper diffusion barrier layer on a rear surface of a wafer. CONSTITUTION: An interlayer dielectric(13) with damascene patterns is formed on a wafer(10). A barrier layer(17) and a seed layer(15) are formed on the damascene patterns. A copper diffusion barrier layer(100) is formed on the rear surface of the wafer. A copper film is then formed on the resultant structure. A copper interconnection is formed by planarizing the copper film to expose the interlayer dielectric.
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