| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing arrangement of a semiconductor device capable of efficiently processing a substrate to be treated with heat, using a heat ray in a short time, regardless of the size of a surface area of the substrate to be treated. <P>SOLUTION: A thermal light source 2 that emits a heat ray toward the surface of a substrate 6 to be treated, is arranged to face at least one main surface of the substrate 6 to be treated. At least one light intensity adjusting member 3 which adjusts the intensity of heat ray on the surface of the substrate 6 to be almost constant is disposed between the thermal light source 2 and the substrate 6. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
