| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to reduce leakage current by using a ZrON or ZrO2 layer with good thermal stability as an insulating layer of an MOS transistor and an MOS capacitor. CONSTITUTION: A semiconductor substrate(10) with an isolation layer(12) is prepared. A ZrON layer or a ZrO2 layer(14) used as a gate insulating layer of MOS transistor and a dielectric film of MOS capacitor is formed on the resultant structure. A first gate electrode(16) for the MOS transistor and a second gate electrode(18) for the MOS capacitor are formed by depositing a conductive layer on the insulating layer and patterning.
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