| 摘要 |
PROBLEM TO BE SOLVED: To provide a gallium nitride semiconductor laser device being usable as a light source of an optical disk system and having good laser oscillation characteristics. SOLUTION: The gallium nitride semiconductor laser device is equipped with an active layer comprising a nitride semiconductor sandwiched at least in between a cladding layer and/or guiding layer on a substrate. The length in a laser resonator direction of an ohmic electrode which provides current to the active layer is shorter than the length of the laser resonator, and the ohmic electrode is divided. COPYRIGHT: (C)2004,JPO&NCIPI
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