| 摘要 |
PROBLEM TO BE SOLVED: To provide a junction FET wherein a trouble that other components are connected with the circuit of its mounted substrate is eliminated, and even when very-high-frequency noise components are inputted to the FET they can be absorbed surely without increasing its circuit area. SOLUTION: The front surface side of a p-type semiconductor substrate 1 has an n-type region 2b to be a diode portion 17 and an n-type well region 2a to be a transistor portion 16. A p-type region 9 is formed in the n-type region 2b of the diode portion. A plurality of gate regions 3 comprising p-type regions are so formed in parallel with each other in the well region 2a that the regions of both the sides of each gate region 3 operate respectively as each source region 5 and each drain region 4. A gate electrode 6, a drain electrode 7, and a source electrode 8 are connected respectively with these respective regions 3, 4, 5. The reverse polarity diode 17 is provided connectively between the gate and source electrodes 6, 8, and a capacitor 11 is provided connectively between the drain and source electrodes 7, 8. COPYRIGHT: (C)2004,JPO&NCIPI
|
