| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a III-V group compound semiconductor crystal by which a composition is controlled for high qualification together with C doping when a C doped GaAsSb compound semiconductor is grown by metal organic vapor-phase epitaxy. SOLUTION: The method is used to manufacture a III-V group compound semiconductor crystal by doping a carbon C to a III-V group compound semiconductor wherein a V group element contains at least arsenic As and antimony Sb by using halocarbon. The supply quantity of AsH<SB>3</SB>used as As supply gas is reduced according to the dosage of the halocarbon. Namely, the supply quantity of AsH<SB>3</SB>is reduced only for a period t1-t2 for supplying the halocarbon. Thus, the halocarbon promotes the decomposition of AsH<SB>3</SB>, and an increase in effective As supply quantity in a vapor phase is subtracted in advance from the supply quantity of AsH<SB>3</SB>, thereby preventing a composition change due to the halocarbon to make a crystal higher in quality. COPYRIGHT: (C)2004,JPO&NCIPI
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