SEMICONDUCTOR LIGHT EMITTING ELEMENT, OPTICAL TRANSMISSION MODULE, OPTICAL TRANSMISSION/RECEPTION MODULE, AND OPTICAL COMMUNICATION SYSTEM

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element of good temperature characteristics and low threshold value, which uses GaInNAs quantum well active layer of compression strain, by expanding freedom in design to reduce strain of the quantum well active layer. SOLUTION: The semiconductor light emitting element comprises an active layer composed of nitrogen (N) which has a compression strain relative to a GaAs substrate, a quantum well active layer containing other group V element as well, and a barrier layer formed around the former. The barrier layer is a group III-V hybrid semiconductor containing both phosphor (P) and antimony (Sb). COPYRIGHT: (C)2004,JPO&NCIPI