| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and a system in which the pulsation of plasma can be prevented at the time when a treatment gas capable of film deposition is made into plasma by using a parallel plate system, and film deposition treatment is performed. SOLUTION: A gas capable of film deposition is introduced into a treatment vessel 2, further, high frequency power is fed to an electrode plate 21 arranged so as to be confronted with a wafer W by a high frequency power source 31, and plasma is generated to deposit a film on the wafer W. In this case, the pressure inside the treatment vessel 2 is controlled to≥133 Pa, and further, a low frequency bias with frequency lower than the above high frequency is applied to the electrode plate 21 by a low frequency power source 42. COPYRIGHT: (C)2004,JPO&NCIPI
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