INFORMATION STORAGE ELEMENT, METHOD OF MANUFACTURING THE SAME, AND MEMORY ARRAY

摘要

PROBLEM TO BE SOLVED: To provide an information storage element which can write and read the information by making use of a mechanical change in a floating gate layer. SOLUTION: The information is stored by changing a mechanical state of the floating gate layer 5 with a spacer 6 held in a gate insulating film 4 and formed as the space, by impressing a voltage to the previously stored electrons (or holes 8) from an external side and then reading a change of state of the floating gate layer 5 with a channel current. Accordingly, only the single cycle of the input and output is required after formation of the element to the electrons (or holes) for the floating gate and thereafter read and write of the information are conducted only with the mechanical operation of the floating gate layer, thereby requiring the input and output of electrons no longer. COPYRIGHT: (C)2004,JPO&NCIPI