| 摘要 |
PURPOSE: A method for forming a dual damascene pattern of a semiconductor device is provided to simplify process and to reduce manufacturing cost by enhancing the etch tolerance of a photoresist pattern. CONSTITUTION: An interlayer dielectric(202) and a hard mask are sequentially formed on a semiconductor substrate(201). The first photoresist pattern containing crosslinkable agent or photo active radical generator is formed to define a trench region. By baking the first photoresist pattern, the etch tolerance of the first photoresist pattern is increased. A via hole(206) is formed by etching the hard mask and the interlayer dielectric using the second photoresist pattern. A trench(207) is then formed by etching the interlayer dielectric using the first harden photoresist pattern after the second photoresist pattern is removed.
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