发明名称 |
MASK HAVING EASILY FORMED ION INJECTION AREA AND METHOD FOR MANUFACTURING THE SAME AND SEMICONDUCTOR DEVICE USING THE SAME |
摘要 |
PURPOSE: A mask and a method for manufacturing the same and a semiconductor device using the same are provided to facilitate a formation of an ion injection area without performing a resist pattern forming process, a pattern exposure process, and a resist pattern peeling process. CONSTITUTION: A mask includes a plate-like member(1) having a mask pattern area and a pn junction, and a current supplying portion(6,6N,6P) supplying a current to the pn junction. A current is fed to the pn junction, thereby causing a Peltier effect and controlling a temperature of the mask pattern area. The mask pattern area is a stencil mask for ion implantation in which ions are allowed to be passed through openings thereof. The mask pattern area is configured to function as a cooling surface due to the Peltier effect.
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申请公布号 |
KR20040057930(A) |
申请公布日期 |
2004.07.02 |
申请号 |
KR20030092824 |
申请日期 |
2003.12.18 |
申请人 |
KABUSHIKI KAISHA TOSHIBA;ROHM CO., LTD. |
发明人 |
KUMANO HIROSHI;MIKATA YUICHI |
分类号 |
H01J37/09;G03F1/00;G03F7/00;G21G5/00;H01L21/027;H01L21/266;H01L35/00;(IPC1-7):H01L21/027 |
主分类号 |
H01J37/09 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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