发明名称 |
Method for fabricating copper damascene structures in porous dielectric materials |
摘要 |
A method for manufacturing integrated circuit devices including metal interconnect structures. The method includes forming a first dielectric material overlying a surface of a semiconductor substrate. The method also includes forming a metal damascene structure in the first dielectric material, which surrounds the metal damascene structure. The method selectively removes the first dielectric material surrounding a portion of the metal damascene structure to expose the portion of the metal damascene structure. The method forms a porous dielectric material surrounding a vicinity of the exposed portion of the metal damascene structure, whereupon the porous dielectric material has a dielectric constant ranging from no greater than 2.6 but greater than 1.
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申请公布号 |
US2004126997(A1) |
申请公布日期 |
2004.07.01 |
申请号 |
US20030391538 |
申请日期 |
2003.03.17 |
申请人 |
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) LTD, CO. |
发明人 |
NING XIAN JIE |
分类号 |
H01L21/768;H01L23/522;H01L23/532;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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地址 |
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