发明名称 Method and apparatus for monitoring a plasma in a material processing system
摘要 The present invention presents an improved apparatus and method for monitoring a material processing system, wherein the material processing system includes a plasma processing tool, a number of RF-responsive sensors coupled to the plasma processing tool to generate and transmit plasma data, and a sensor interface assembly (SIA) configured to receive the plasma data from the plurality of RF-responsive sensors.
申请公布号 US2004127031(A1) 申请公布日期 2004.07.01
申请号 US20020331341 申请日期 2002.12.31
申请人 TOKYO ELECTRON LIMITED 发明人 KLEKOTKA JAMES E.
分类号 H01J37/32;H01L21/00;(IPC1-7):H01L21/00;H01L21/302;H01L21/461 主分类号 H01J37/32
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