发明名称 |
Ferroelectric memory devices with expanded plate line and methods of fabricating the same |
摘要 |
A ferroelectric memory device includes a lower interlayer dielectric on a semiconductor substrate, a plurality of ferroelectric capacitors, and a plate line. The ferroelectric capacitors are on the lower interlayer dielectric. The plate line extends across and electrically connects to surfaces of at least two adjacent ones of the plurality of ferroelectric capacitors.
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申请公布号 |
US2004124455(A1) |
申请公布日期 |
2004.07.01 |
申请号 |
US20030624327 |
申请日期 |
2003.07.22 |
申请人 |
LEE KYU-MANN;NAM SANG-DON;PARK KUN-SANG |
发明人 |
LEE KYU-MANN;NAM SANG-DON;PARK KUN-SANG |
分类号 |
H01L27/105;H01L21/768;H01L21/8246;H01L27/115;H01L29/76;(IPC1-7):H01L29/76 |
主分类号 |
H01L27/105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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