METHOD FOR PRODUCING SILICON EPITAXIAL WAFER

摘要

When a silicon epitaxial wafer is produced through vapor phase growth of a silicon epitaxial layer on the major front surface of a semiconductor substrate (W) which has a CVD oxide film formed on the major back surface, a susceptor (20) having a counterbore (21) in which the semiconductor substrate (W) is placed and a hole portion (22) is used. The hole portion (22) is formed on the inner side of the outermost periphery of the counterbore (21) and penetrates through to the back side of the susceptor. The hole portion (22) stays open during the vapor phase growth of the silicon epitaxial layer. The semiconductor substrate (W) is placed in the counterbore (21), having the CVD oxide film face the hole portion (22), and the silicon epitaxial layer is grown on the major front surface of the semiconductor substrate (W) by vapor phase system.