TRANSPARENT CONDUCTIVE FILM AND FILM FORMING METHOD THEREFOR

摘要

Sputter particles from a target are transported onto an organic substrate by the forced gas flow of a sputter gas and deposited there by using the target containing indium oxide and tin oxide while a dc bias voltage or an RF bias is being applied to approarch the target so as to be positively affected by plasma. Accordingly, an ITO transparent conductive film having a specific resistance of up to 10<-3> ohm.cm is formed on the organic substrate. The formed ITO transparent conductive film has, at an X-ray diffraction, a ratio between a peak intensity at the (222) plane of indium oxide tin and a peak intensity at the (400) plane of at least 1:1 and up to 4:1.